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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC635/D High Current Transistors NPN Silicon COLLECTOR 2 3 BASE 1 EMITTER BC635 BC637 BC639 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC 635 45 45 BC 637 60 60 5.0 0.5 625 5.0 1.5 12 - 55 to +150 BC 639 80 80 Unit Vdc Vdc Vdc Adc mW mW/C Watt mW/C C 1 2 3 CASE 29-04, STYLE 14 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) V(BR)CEO BC635 BC637 BC639 V(BR)CBO BC635 BC637 BC639 V(BR)EBO ICBO -- -- -- -- 100 10 nAdc Adc 45 60 80 5.0 -- -- -- -- -- -- -- -- Vdc 45 60 80 -- -- -- -- -- -- Vdc Vdc Collector - Base Breakdown Voltage (IC = 100 Adc, IE = 0) Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TA = 125C) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996 1 BC635 BC637 BC639 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 5.0 mAdc, VCE = 2.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc) hFE BC635 BC637 BC639 VCE(sat) VBE(on) 25 40 40 40 25 -- -- -- -- -- -- -- -- -- -- 250 160 160 -- 0.5 1.0 Vdc Vdc -- (IC = 500 mA, VCE = 2.0 V) Collector - Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base-Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc) DYNAMIC CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. fT Cob Cib -- -- -- 200 7.0 50 -- -- -- MHz pF pF 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data BC635 BC637 BC639 1000 500 IC, COLLECTOR CURRENT (mA) 200 100 50 20 10 5 2 1 1 PD TA 25C PD TC 25C BC635 BC637 BC639 100 PD TC 25C PD TA 25C SOA = 1S hFE, DC CURRENT GAIN 200 500 VCE = 2 V 100 50 2 345 7 10 20 30 40 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 20 1 3 5 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 1000 Figure 1. Active Region Safe Operating Area f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) Figure 2. DC Current Gain 500 300 V, VOLTAGE (VOLTS) 1 0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2 V 100 VCE = 2 V 0.6 0.4 50 0.2 VCE(sat) @ IC/IB = 10 20 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 0 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 3. Current-Gain -- Bandwidth Product Figure 4. "Saturation" and "On" Voltages V, TEMPERATURE COEFFICIENTS (mV/C) -0.2 -1.0 VCE = 2 VOLTS T = 0C to +100C -1.6 V for VBE -2.2 1 3 5 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 1000 Figure 5. Temperature Coefficients Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 BC635 BC637 BC639 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X-X DIM A B C D F G H J K L N P R V CASE 029-04 (TO-226AA) ISSUE AD STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data *BC635/D* BC635/D |
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